High quality homoepitaxial GaN grown by molecular beam epitaxy with NH3 on surface cracking

被引：43

作者：

Mayer, M ^{[1
]}

Pelzmann, A

Kamp, M

Ebeling, KJ

Teisseyre, H

Nowak, G

Leszczynski, M

Grzegory, I

Porowski, S

Karczewski, G

机构：

[1] Univ Ulm, Dept Optoelect, D-89069 Ulm, Germany

[2] Polish Acad Sci, High Pressure Res Ctr, PL-01142 Warsaw, Poland

[3] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1997年 / 36卷 / 12B期

关键词：

GaN; MBE; NH3; homoepitaxy; on surface cracking; FL; exciton;

D O I：

10.1143/JJAP.36.L1634

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial GaN films have been grown on GaN single-crystal substrates, using on surface cracked ammonia as nitrogen precursor for molecular beam epitaxy. With this approach excellent optical and structural properties are achieved. Low-temperature photoluminescence shows well-resolved excitonic lines with record low linewidths as narrow as 0.5 meV. The transitions are attributed to excitons bound to neutral donors ((D-o, X)(1) at 3.4709 eV and (D-o, X)(2) at 3.4718 eV) and to a neutral acceptor ((A(o), X) at 3.4663 eV). In addition, free exciton lines are observed at 3.4785 eV, 3.4832 eV, and 3.499 eV for excitons A, B, and C, respectively.

引用

页码：L1634 / L1636

页数：3

共 12 条

[1] THE HOMOEPITAXY OF GAN BY METALORGANIC VAPOR-PHASE EPITAXY USING GAN SUBSTRATES [J].