A simple processing sequence for selective emitters

被引：10

作者：

Horzel, J ^{[1
]}

Szlufcik, J ^{[1
]}

Nijs, J ^{[1
]}

Mertens, R ^{[1
]}

机构：

[1] IMEC, B-3001 Heverlee, Belgium

来源：

CONFERENCE RECORD OF THE TWENTY SIXTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1997 | 1997年

关键词：

D O I：

10.1109/PVSC.1997.654048

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

A novel method to form selective emitters in only one diffusion step without etching or masking steps has been recently introduced [1, 2]. A phosphorous containing doping source is applied selectively to the front side of a p-type crystalline Si substrate in form of a paste and subsequently dried. The print is performed with advanced screen printing equipment that allows very precise positioning. In only one diffusion step deeply diffused regions form under the printed doping source, At the same time the adjacent regions become weaker doped by P atoms diffusing indirectly from the printed source through the gas ambient into those regions that were not covered by the P paste. Advantages of such a processing sequence over typical industrial processes will be addressed. Results from an ongoing optimisation of such a sequence will be given and interpreted.

引用

页码：139 / 142

页数：4