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Room temperature fabrication of porous ZnO photoelectrodes for flexible dye-sensitized solar cells
被引:101
作者
:
Liu, Xizhe
论文数:
0
引用数:
0
h-index:
0
机构:
Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China
Liu, Xizhe
Luo, Yanhong
论文数:
0
引用数:
0
h-index:
0
机构:
Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China
Luo, Yanhong
Li, Hong
论文数:
0
引用数:
0
h-index:
0
机构:
Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China
Li, Hong
Fan, Yuzun
论文数:
0
引用数:
0
h-index:
0
机构:
Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China
Fan, Yuzun
Yu, Zhexun
论文数:
0
引用数:
0
h-index:
0
机构:
Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China
Yu, Zhexun
Lin, Yuan
论文数:
0
引用数:
0
h-index:
0
机构:
Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China
Lin, Yuan
Chen, Liquan
论文数:
0
引用数:
0
h-index:
0
机构:
Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China
Chen, Liquan
Meng, Qingbo
论文数:
0
引用数:
0
h-index:
0
机构:
Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China
Meng, Qingbo
机构
:
[1]
Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China
[2]
Chinese Acad Sci, Inst Chem, Beijing 100080, Peoples R China
来源
:
CHEMICAL COMMUNICATIONS
|
2007年
/ 27期
关键词
:
D O I
:
10.1039/b700472a
中图分类号
:
O6 [化学];
学科分类号
:
0703 ;
摘要
:
We fabricated ZnO photoelectrodes at room temperature by doctor-blading ZnO gel; the adequate interparticle connection and the effective ammonia activation process improved the flexible DSC's efficiency to 3.8% (under 100 mW cm(-2)).
引用
收藏
页码:2847 / 2849
页数:3
相关论文
共 29 条
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Swiss Fed Inst Technol, Inst Photon & Interfaces, CH-1015 Lausanne, Switzerland
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Swiss Fed Inst Technol, Inst Photon & Interfaces, CH-1015 Lausanne, Switzerland
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Swiss Fed Inst Technol, Inst Photon & Interfaces, CH-1015 Lausanne, Switzerland
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Sony Deutschland GmbH, Mat Sci Lab, D-70327 Stuttgart, Germany
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Schmid, A
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Sony Deutschland GmbH, Mat Sci Lab, D-70327 Stuttgart, Germany
Sony Deutschland GmbH, Mat Sci Lab, D-70327 Stuttgart, Germany
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Obermaier, M
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Sony Deutschland GmbH, Mat Sci Lab, D-70327 Stuttgart, Germany
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Sony Deutschland GmbH, Mat Sci Lab, D-70327 Stuttgart, Germany
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Sony Deutschland GmbH, Mat Sci Lab, D-70327 Stuttgart, Germany
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Keis, K
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Magnusson, E
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Univ Uppsala, Dept Phys Chem, S-75121 Uppsala, Sweden
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Univ Uppsala, Dept Phys Chem, S-75121 Uppsala, Sweden
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Univ Uppsala, Dept Phys Chem, S-75121 Uppsala, Sweden
Univ Uppsala, Dept Phys Chem, S-75121 Uppsala, Sweden
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Bach, U
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Swiss Fed Inst Technol, Inst Photon & Interfaces, CH-1015 Lausanne, Switzerland
Bach, U
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Lupo, D
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0
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Swiss Fed Inst Technol, Inst Photon & Interfaces, CH-1015 Lausanne, Switzerland
Lupo, D
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Comte, P
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h-index:
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机构:
Swiss Fed Inst Technol, Inst Photon & Interfaces, CH-1015 Lausanne, Switzerland
Comte, P
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Moser, JE
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h-index:
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Swiss Fed Inst Technol, Inst Photon & Interfaces, CH-1015 Lausanne, Switzerland
Moser, JE
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Swiss Fed Inst Technol, Inst Photon & Interfaces, CH-1015 Lausanne, Switzerland
Weissörtel, F
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Salbeck, J
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Swiss Fed Inst Technol, Inst Photon & Interfaces, CH-1015 Lausanne, Switzerland
Salbeck, J
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Spreitzer, H
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h-index:
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Swiss Fed Inst Technol, Inst Photon & Interfaces, CH-1015 Lausanne, Switzerland
Spreitzer, H
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Grätzel, M
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0
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Swiss Fed Inst Technol, Inst Photon & Interfaces, CH-1015 Lausanne, Switzerland
Swiss Fed Inst Technol, Inst Photon & Interfaces, CH-1015 Lausanne, Switzerland
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Duerr, M.
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0
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0
h-index:
0
机构:
Sony Deutschland GmbH, Mat Sci Lab, D-70327 Stuttgart, Germany
Sony Deutschland GmbH, Mat Sci Lab, D-70327 Stuttgart, Germany
Duerr, M.
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Yasuda, A.
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0
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Sony Deutschland GmbH, Mat Sci Lab, D-70327 Stuttgart, Germany
Sony Deutschland GmbH, Mat Sci Lab, D-70327 Stuttgart, Germany
Yasuda, A.
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Nelles, G.
论文数:
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h-index:
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Sony Deutschland GmbH, Mat Sci Lab, D-70327 Stuttgart, Germany
Sony Deutschland GmbH, Mat Sci Lab, D-70327 Stuttgart, Germany
Nelles, G.
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APPLIED PHYSICS LETTERS,
2006,
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[J].
Dürr, M
论文数:
0
引用数:
0
h-index:
0
机构:
Sony Deutschland GmbH, Mat Sci Lab, D-70327 Stuttgart, Germany
Sony Deutschland GmbH, Mat Sci Lab, D-70327 Stuttgart, Germany
Dürr, M
;
Schmid, A
论文数:
0
引用数:
0
h-index:
0
机构:
Sony Deutschland GmbH, Mat Sci Lab, D-70327 Stuttgart, Germany
Sony Deutschland GmbH, Mat Sci Lab, D-70327 Stuttgart, Germany
Schmid, A
;
Obermaier, M
论文数:
0
引用数:
0
h-index:
0
机构:
Sony Deutschland GmbH, Mat Sci Lab, D-70327 Stuttgart, Germany
Sony Deutschland GmbH, Mat Sci Lab, D-70327 Stuttgart, Germany
Obermaier, M
;
Rosselli, S
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0
引用数:
0
h-index:
0
机构:
Sony Deutschland GmbH, Mat Sci Lab, D-70327 Stuttgart, Germany
Sony Deutschland GmbH, Mat Sci Lab, D-70327 Stuttgart, Germany
Rosselli, S
;
Yasuda, A
论文数:
0
引用数:
0
h-index:
0
机构:
Sony Deutschland GmbH, Mat Sci Lab, D-70327 Stuttgart, Germany
Sony Deutschland GmbH, Mat Sci Lab, D-70327 Stuttgart, Germany
Yasuda, A
;
Nelles, G
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0
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h-index:
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Sony Deutschland GmbH, Mat Sci Lab, D-70327 Stuttgart, Germany
Sony Deutschland GmbH, Mat Sci Lab, D-70327 Stuttgart, Germany
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Rutgers State Univ, Dept Chem, Newark, NJ 07102 USA
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Rutgers State Univ, Dept Chem, Newark, NJ 07102 USA
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Chen, Hanhong
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Rutgers State Univ, Dept Chem, Newark, NJ 07102 USA
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Rutgers State Univ, Dept Chem, Newark, NJ 07102 USA
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Rutgers State Univ, Dept Chem, Newark, NJ 07102 USA
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Rutgers State Univ, Dept Chem, Newark, NJ 07102 USA
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