A completely flexible organic transistor obtained by a one-mask photolithographic process

被引：55

作者：

Bonfiglio, A ^{[1
]}

Mameli, F

Sanna, O

机构：

[1] Univ Cagliari, INFM, Dept Elect & Elect Engn, I-09124 Cagliari, Italy

[2] INFM S3 Nanostruct & Biosyst Surfaces, Modena, Italy

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 20期

关键词：

D O I：

10.1063/1.1577216

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A one-mask optolithographic process is proposed for obtaining a completely flexible organic thin-film transistor structure. The proposed device consists in a "bottom structure" assembled on a flexible and transparent insulating layer, without any substrate, with source and drain contacts on one side and the gate on the opposite side. The main advantage consists in avoiding the presence of a substrate as the insulator itself is able to support the whole structure. Furthermore, being optically transparent, the insulator is suitable to be employed for the photolithographic realization of the contacts with a one-mask process with no need of mask alignment between source-drain contacts and gate. (C) 2003 American Institute of Physics.

引用

页码：3550 / 3552

页数：3

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