Lateral design of InP/InGaAs DHBTs for 40 Gbit/s ICs

被引：11

作者：

Blayac, S ^{[1
]}

Riet, M ^{[1
]}

Benchimol, JL ^{[1
]}

Berdaguer, P ^{[1
]}

Kauffman, N ^{[1
]}

Godin, J ^{[1
]}

Scavennec, A ^{[1
]}

机构：

[1] France Telecom R&D, OPTO, Grp Interet Econ, F-91460 Marcoussis, France

来源：

2000 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2000年

关键词：

D O I：

10.1109/ICIPRM.2000.850338

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InP-based HBTs are now available exhibiting cut-off frequency well over 100GHz even at 1mA, In this paper, a 40 Gbit/s IC-oriented InP/InGaAs DHBT technology is presented with maximum Ft of 170GHz and Fmax over 210GHz with BVce0>9V. Specific features of this technology have been developed to increase the design flexibility: high current gain and frequency performances are kept over a large range of collector currents (from 1mA to 100mA) and for various dimensions. This is achieved through size-specific lateral transistor design optimization. These features are required for high-performance 40Gbit/s ICs designed for Optical Transmission Systems, in which careful transistor optimization has to be performed according to its function in the circuit.

引用

页码：481 / 484

页数：4