Molecular beam epitaxial growth of BGaAs ternary compounds

BxGa1-xAs ternary compounds with boron compositions varying up to x = 1% have been grown by molecular beam epitaxy. Reflection high energy electron diffraction and double crystal x-ray diffraction measurements show that grown layers are single crystal with boron composition up to 0.25% and exhibit specular surface morphology. Photoluminescence measurements indicated a monotonic increase in energy bandgap with boron composition up to 0.25%. The layers showed p-type conductivity with hole concentration reaching the low 10(19) cm(-3) range. Increasing boron concentrations leads to rough surface morphology and reduction in photoluminescence intensity. Initial results indicate that lower growth temperature may be useful for increasing boron incorporation in BGaAs compounds.