Nanoscale indentation on Si(111) surfaces with scanning tunneling microscope

被引：7

作者：

Hasunuma, R ^{[1
]}

Komeda, T

Tokumoto, H

机构：

[1] Angstrom Technol Partnership, Joint Res Ctr Atom Technol, Tsukuba, Ibaraki 305, Japan

[2] Natl Inst Adv Interdisciplinary Res, Joint Res Ctr Atom Technol, Tsukuba, Ibaraki 305, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1997年 / 36卷 / 6B期

关键词：

STM; indentation; point contact; Si(111); chemical adhesion; field evaporation;

D O I：

10.1143/JJAP.36.3827

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the mechanism of Si atom removal by measuring the current during formation of a point contact between the W tip of a scanning tunneling microscope (STM) and the Si(111)-7 x 7 surface. The stepwise drops observed in the current during tip retraction may be attributed to the reduction of the contact area in an atom-by-atom manner. Based on the estimation of the contact size, it was concluded that the adatoms were removed by chemical adhesion of the Si atoms with the W tip. The chemical adhesion was assisted by the mechanical force applied to the Si surface; contact potential and current induced local heating. A trilayer was removed by field evaporation with the assistance of electromigration on the Si surface.

引用

页码：3827 / 3831

页数：5

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