Electronic effects of sodium in epitaxial CuIn1-xGaxSe2

被引:102
作者
Schroeder, DJ
Rockett, AA
机构
[1] MOTOROLA INC,COMMUN & ADV CONSUMER TECHNOL GRP,CHANDLER,AZ 85224
[2] UNIV ILLINOIS,DEPT MAT SCI & ENGN,URBANA,IL 61801
[3] MOTOROLA INC,COORDINATED SCI LAB,CHANDLER,AZ 85224
基金
欧盟地平线“2020”;
关键词
D O I
10.1063/1.366365
中图分类号
O59 [应用物理学];
学科分类号
摘要
Temperature dependent Hall effect measurements were made on Na-contaminated and uncontaminated epitaxial p-type CuIn1-xGaxSe2 films. Na was introduced by diffusion into as-deposited samples using both NaOH and Na2Se as sources. Na concentrations were measured using secondary ion mass spectroscopy by comparison to an implanted standard, Films contaminated with Na from either source were found to have much lower compensating donor densities than as-deposited films, Oxygen and other impurities were not found to be necessary to produce this effect although some changes with Se content were observed. These were independent of the Na effect. (C) 1997 American Institute of Physics.
引用
收藏
页码:4982 / 4985
页数:4
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