An advanced MOSFET design approach and a calibration methodology using inverse modeling that accurately predicts device characteristics

被引：11

作者：

Das, A ^{[1
]}

Newmark, D ^{[1
]}

Clejan, I ^{[1
]}

Foisy, M ^{[1
]}

Sharma, M ^{[1
]}

Venkatesan, S ^{[1
]}

Veeraraghavan, S ^{[1
]}

Misra, V ^{[1
]}

Gadepally, B ^{[1
]}

Parrillo, L ^{[1
]}

机构：

[1] Motorola Inc, Austin, TX 78721 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年

关键词：

D O I：

10.1109/IEDM.1997.650476

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a MOSFET design approach that contains a comprehensive analytic representation of an advanced MOSFET structure and doping profile. A methodology to extract parameters for the analytic representation based on device simulation and IV and CV measurements is described. The extracted model is scaled to sub-nominal dimensions to illustrate its ability to predict device characteristics.

引用

页码：687 / 690

页数：4