Origin of ultraviolet photoluminescence in ZnO quantum dots: Confined excitons versus surface-bound impurity exciton complexes

被引:261
作者
Fonoberov, VA [1 ]
Balandin, AA [1 ]
机构
[1] Univ Calif Riverside, Dept Elect Engn, Nanodevice Lab, Riverside, CA 92521 USA
关键词
D O I
10.1063/1.1835992
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have theoretically investigated the origin of ultraviolet photoluminescence (PL) in ZnO quantum dots with diameters from 2 to 6 nm. Two possible sources of ultraviolet PL have been considered: excitons confined in the quantum dot and excitons bound to an ionized impurity located at the quantum-dot surface. It is found that depending on the fabrication method and surface passivation technique, the ultraviolet PL of ZnO quantum dots can be attributed to either confined excitons or surface-bound ionized acceptor-exciton complexes. The exciton radiative lifetime is shown to be very sensitive to the exciton localization and can be used as a tool to discriminate between these two sources of PL. (C) 2004 American Institute of Physics.
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页码:5971 / 5973
页数:3
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