The role of dangling-bond, hydrogen and adsorbate in diamond surface conduction

被引：17

作者：

Dai, Y

Huang, BB ^{[1
]}

Dai, DD

机构：

[1] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China

[2] Shandong Univ, Sch Phys & Microelect, Jinan 250100, Peoples R China

[3] N Carolina State Univ, Dept Chem, Raleigh, NC 27695 USA

来源：

DIAMOND AND RELATED MATERIALS | 2003年 / 12卷 / 01期

关键词：

surface conduction; diamond defects; hydrogen;

D O I：

10.1016/S0925-9635(02)00244-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The mechanism of surface conductivity (SC) in diamond, concerning the role of dangling-bond, hydrogen and adsorbate, has been investigated by density functional theory calculations of simulating clusters. We have deduced two possible mechanisms for the SC: one originates from the transport of electron in the localized states near the Fermi level, and another one from the holes in the extended states at about the mobility edge. These models may help one understand most of the experimental results qualitatively or quantitatively in order. (C) 2002 Elsevier Science B.V. All rights reserved.

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页码：15 / 19

页数：5

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