A general model of 1/fγ noise

被引:11
作者
Pellegrini, B [1 ]
机构
[1] Univ Pisa, Dipartimento Ingn Informaz Elettron Informat & Te, CSMDR, CNR, I-56126 Pisa, Italy
关键词
D O I
10.1016/S0026-2714(00)00061-5
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A model of 1/f(gamma) noise is proposed that accounts for all its experimental properties. Its origin is found to be in the charge fluctuations in few defects, even less than 100, with relaxation times tau arbitrarily distributed in a wide interval, up to large values. The coupling coefficient between local and output fluctuations, the dependence of the defect occupation factor on tau, the frequency exponent gamma and the coefficient alpha of the spectrum are computed in a general and simple way. Published by Elsevier Science Ltd.
引用
收藏
页码:1775 / 1780
页数:6
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