Magnetoelastic behaviour of Gd5Ge4

被引:85
作者
Magen, C
Morellon, L
Algarabel, PA
Marquina, C
Ibarra, MR
机构
[1] Univ Zaragoza, Dept Fis Mat Condensada, Zaragoza 50009, Spain
[2] Univ Zaragoza, Inst Ciencia Mat Aragon, Zaragoza 50009, Spain
[3] Consejo Super Investigac Cient, Zaragoza 50009, Spain
关键词
D O I
10.1088/0953-8984/15/14/314
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
A complete investigation of the complex magnetic behaviour of Gd5Ge4 by means of linear thermal expansion and magnetostriction measurements (5300 K, 0-120 kOe) has been carried out. Our results support the suggested existence in this system of a coupled crystallographic-magnetic transition from a Gd5Ge4-type Pnma (antiferromagnetic) to a Gd5Si4-type Pnma (ferromagnetic) state. Strong magnetoelastic effects are observed at the field-induced first-order magnetic-martensitic transformation. A revised magnetic and crystallographic H-T phase diagram is proposed.
引用
收藏
页码:2389 / 2397
页数:9
相关论文
共 34 条
[1]   Making and breaking covalent bonds across the magnetic transition in the giant magnetocaloric material Gd5(Si2Ge2) [J].
Choe, W ;
Pecharsky, VK ;
Pecharsky, AO ;
Gschneidner, KA ;
Young, VG ;
Miller, GJ .
PHYSICAL REVIEW LETTERS, 2000, 84 (20) :4617-4620
[2]   Structural and magnetic properties of the Mn5Si3-type (Gd1-xScx)5Ge3 compounds [J].
Dhar, SK ;
Manfrinetti, P ;
Palenzona, A ;
Pani, M .
JOURNAL OF ALLOYS AND COMPOUNDS, 2002, 347 (1-2) :1-8
[3]   Extraordinary magnetization behavior of single crystalline TbFe4.4Al7.6 -: art. no. 020408 [J].
Duong, NP ;
Brück, E ;
Brommer, PE ;
de Visser, A ;
de Boer, FR ;
Buschow, KHJ .
PHYSICAL REVIEW B, 2002, 65 (02) :1-4
[4]   NEW FERROMAGNETIC 5 - 4 COMPOUNDS IN RARE EARTH SILICON AND GERMANIUM SYSTEMS [J].
HOLTZBERG, F ;
GAMBINO, RJ ;
MCGUIRE, TR .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (11) :2283-+
[5]   A FIRST-ORDER PHASE-TRANSITION INDUCED BY A MAGNETIC-FIELD [J].
KUWAHARA, H ;
TOMIOKA, Y ;
ASAMITSU, A ;
MORITOMO, Y ;
TOKURA, Y .
SCIENCE, 1995, 270 (5238) :961-963
[6]   Magnetic correlations induced by magnetic field and temperature in Gd5Ge4 -: art. no. 214427 [J].
Levin, EM ;
Gschneidner, KA ;
Pecharsky, VK .
PHYSICAL REVIEW B, 2002, 65 (21) :1-5
[7]   Electrical resistivity, electronic heat capacity, and electronic structure of Gd5Ge4 -: art. no. 235103 [J].
Levin, EM ;
Pecharsky, VK ;
Gschneidner, KA ;
Miller, GJ .
PHYSICAL REVIEW B, 2001, 64 (23)
[8]   Magnetic-field and temperature dependencies of the electrical resistance near the magnetic and crystallographic first-order phase transition of Gd-5(Si2Ge2) [J].
Levin, EM ;
Pecharsky, VK ;
Gschneidner, KA .
PHYSICAL REVIEW B, 1999, 60 (11) :7993-7997
[9]   Spontaneous generation of voltage in Gd5(SixGe4-x) during a first-order phase transition induced by temperature or magnetic -: art. no. 174110 [J].
Levin, EM ;
Pecharsky, VK ;
Gschneidner, KA .
PHYSICAL REVIEW B, 2001, 63 (17)
[10]   Real and imaginary components of the alternating current magnetic susceptibility of RAl2 (R=Gd, Dy, and Er) in the ferromagnetic region [J].
Levin, EM ;
Pecharsky, VK ;
Gschneidner, KA .
JOURNAL OF APPLIED PHYSICS, 2001, 90 (12) :6255-6262