High-power flat L-band erbium-doped fiber ASE source using dual forward-pumping scheme

被引：15

作者：

Tsai, SC

Tsai, TC

Law, PC

Chen, YK ^{[1
]}

机构：

[1] Natl Sun Yat Sen Univ, Inst Electroopt Engn, Kaohsiung 80424, Taiwan

[2] ChungHwa Telecommun Labs, Yangmei 326, Taiwan

来源：

OPTICAL AND QUANTUM ELECTRONICS | 2003年 / 35卷 / 02期

关键词：

amplified spontaneous emission (ASE); erbium-doped fiber amplifier (EDFA); fiber sources; superfluorescent fiber source (SFS);

D O I：

10.1023/A:1022434016109

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We experimentally investigate a high output power L-band (1565-1605 nm) erbium-doped fiber amplified spontaneous emission (ASE) source using dual forward-pumping configuration. Such configuration allows high pumping-power operation and enhances the pumping efficiency. The high pumping efficiency of 36.1% is achieved for such ASE source with a mirror reflectance of 30%. The output power of about 72.2 mW and a linewidth of 40.8 nm with a power ripple of 0.7 dB are obtained without using any external spectral filters.

引用

收藏

页码：161 / 167

页数：7

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