Semiconductor nanowires for 0D and 1D physics and applications

被引：150

作者：

Samuelson, L

Thelander, C

Björk, MT

Borgström, M

Deppert, K

Dick, KA

Hansen, AE

Mårtensson, T

Panev, N

Persson, AI

Seifert, W

Sköld, N

Larsson, MW

Wallenberg, LR

机构：

[1] Lund Univ, Solid State Phys Nanometer Struct Consortium, S-22100 Lund, Sweden

[2] Lund Univ, Mat Chem Nanometer Struct Consortium, S-22100 Lund, Sweden

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2004年 / 25卷 / 2-3期

关键词：

nanowires; heterostructures; quantum confinement; single-electron tunneling;

D O I：

10.1016/j.physe.2004.06.030

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

During the last 5 years the potential for applications of semiconductor nanowires has grown rapidly via the development of methods for catalytically induced nanowire growth using the, so-called vapor-liquid-solid (VLS) growth mode. The VLS method offers a high degree of control of parameters such as position, diameter, length and composition, including the realization of atomically abrupt heterostructure interfaces inside a nanowire. In this review, we summarize the progress and the standing of our research from the point of view of controlled growth, structural and electronic properties and in terms of different families of devices which have been possible to realize. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：313 / 318

页数：6