Direct evidence for defect conduction at interface between gallium nitride and sapphire

被引：7

作者：

Ansell, BJ

Harrison, L

Foxon, CT

Harris, JJ

Cheng, TS

机构：

[1] Univ Nottingham, Dept Phys, Nottingham NG7 2RD, England

[2] Univ Nottingham, Dept Elect & Elect Engn, Nottingham NG7 2RD, England

[3] UCL, Dept Elect & Elect Engn, London WC1E 7JE, England

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 14期

关键词：

D O I：

10.1049/el:20000902

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The mobility and carrier concentration carrier depth profiles have been measured for a GaN epilayer grown by plasma-assisted MBE. The results show that the apparent carrier concentration increases at the interface whilst the apparent mobility decreases. A two-layer model can be used to explain this behaviour.

引用

页码：1237 / 1239

页数：3

共 7 条

[1] Harris JJ, 1999, PHYS STATUS SOLIDI A, V176, P363, DOI 10.1002/(SICI)1521-396X(199911)176:1<363::AID-PSSA363>3.0.CO
[2] 2-M
[3] Degenerate layer at GaN/sapphire interface: Influence on hall-effect measurements
Look, DC
Molnar, RJ
[J]. APPLIED PHYSICS LETTERS, 1997, 70 (25) : 3377 - 3379
[4] LOOK DC, 1989, ELECT CHARACTERISATI
[5] EMERGING GALLIUM NITRIDE BASED DEVICES
MOHAMMAD, SN
SALVADOR, AA
MORKOC, H
[J]. PROCEEDINGS OF THE IEEE, 1995, 83 (10) : 1306 - 1355
[6] ELECTRON-TRANSPORT MECHANISM IN GALLIUM NITRIDE
MOLNAR, RJ
LEI, T
MOUSTAKAS, TD
[J]. APPLIED PHYSICS LETTERS, 1993, 62 (01) : 72 - 74
[7] Microstructure of GaN epitaxial films at different stages of the growth process on sapphire(0001)
Vennegues, P
Beaumont, B
Vaille, M
Gibart, P
[J]. JOURNAL OF CRYSTAL GROWTH, 1997, 173 (3-4) : 249 - 259

← 1 →