Tee effect of the amorphous silicon alpha-gamma transition on Thin Film Transistor performance

被引：17

作者：

French, ID ^{[1
]}

Deane, SC ^{[1
]}

Murley, DT ^{[1
]}

Hewett, J ^{[1
]}

Gale, IG ^{[1
]}

Powell, MJ ^{[1
]}

机构：

[1] Philips Res Labs, Redhill RH1 5HA, Surrey, England

来源：

AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY - 1997 | 1997年 / 467卷

关键词：

D O I：

10.1557/PROC-467-875

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated the effect of depositing amorphous silicon (a-Si:H) under alpha and gamma (or dusty) plasma conditions on hydrogen bonding and TFT performance. By infrared measurements three deposition regimes could be identified due to their distinctive absorption curves in the bending mode range of 800 to 900 cm(-1). These corresponded to a films deposited below 300 degrees C, gamma films deposited below 300 degrees C, and films deposited in either plasma condition at temperatures of 300 degrees C and above. There was a correlation between the a-Si:H material regimes and TFT performance. When the deposition temperature was below 300 degrees C the alpha-TFTs had a higher field effect mobility than gamma-TFTs, but lower stability. For deposition temperatures of 300 degrees C and above the films had more similar properties regardless of whether they were deposited under alpha or gamma conditions. TFT mobilities were the same, but TFTs containing a-Si:H deposited under gamma conditions were still more stable. These results show that the mobility and stability of TFTs are optimised for different growth conditions, and that the overall best conditions for TFT manufacture depends upon the specific application.

引用

页码：875 / 880

页数：6