X-ray diffraction analysis of the defect structure in epitaxial GaN

被引：311

作者：

Heinke, H ^{[1
]}

Kirchner, V ^{[1
]}

Einfeldt, S ^{[1
]}

Hommel, D ^{[1
]}

机构：

[1] Univ Bremen, Inst Solid State Phys, D-28334 Bremen, Germany

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 14期

关键词：

D O I：

10.1063/1.1314877

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-resolution x-ray diffraction has been used to analyze the type and density of threading dislocations in (001)-oriented GaN epitaxial layers. For this, (00l) and (hkl) Bragg reflections with h or k nonzero were studied, the latter one measured in skew symmetric diffraction geometry. The defect analysis was applied to a variety of GaN layers grown by molecular-beam epitaxy under very different conditions. The outcome is a fundamental correlation between the densities of edge- and screw-type dislocations. (C) 2000 American Institute of Physics. [S0003-6951(00)02740-6].

引用

页码：2145 / 2147

页数：3

共 22 条

[1] Heteroepitaxy of group III nitrides for device applications
Amano, H
Takeuchi, T
Sakai, H
Yamaguchi, S
Wetzel, C
Akasaki, I
[J]. SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 1115 - 1120
[2] THE MEASUREMENT OF THREADING DISLOCATION DENSITIES IN SEMICONDUCTOR CRYSTALS BY X-RAY-DIFFRACTION
AYERS, JE
[J]. JOURNAL OF CRYSTAL GROWTH, 1994, 135 (1-2) : 71 - 77
[3] Buffer layers for the growth of GaN on sapphire by molecular beam epitaxy
Ebel, R
Fehrer, M
Figge, S
Einfeldt, S
Selke, H
Hommel, D
[J]. JOURNAL OF CRYSTAL GROWTH, 1999, 201 : 433 - 436
[4] Plasma assisted molecular beam epitaxy growth of GaN
Einfeldt, S
Birkle, U
Thomas, C
Fehrer, M
Heinke, H
Hommel, D
[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 50 (1-3): : 12 - 15
[5] THE ESTIMATION OF DISLOCATION DENSITIES IN METALS FROM X-RAY DATA
GAY, P
HIRSCH, PB
KELLY, A
[J]. ACTA METALLURGICA, 1953, 1 (03): : 315 - 319
[6] Morphology and microstructural evolution in the early stages of hydride vapor phase epitaxy of GaN on sapphire
Golan, Y
Wu, XH
Speck, JS
Vaudo, RP
Phanse, VM
[J]. APPLIED PHYSICS LETTERS, 1998, 73 (21) : 3090 - 3092
[7] Heinke H, 1999, PHYS STATUS SOLIDI A, V176, P391, DOI 10.1002/(SICI)1521-396X(199911)176:1<391::AID-PSSA391>3.0.CO
[8] 2-I
[9] Heying B, 1996, APPL PHYS LETT, V68, P643, DOI 10.1063/1.116495
[10] X-ray diffraction peaks due to misfit dislocations in heteroepitaxial structures
Kaganer, VM
Kohler, R
Schmidbauer, M
Opitz, R
Jenichen, B
[J]. PHYSICAL REVIEW B, 1997, 55 (03): : 1793 - 1810

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