Determination of diffusion lengths of minority carriers in Cd1-xZnxTe (x≈0.04) by the EBIC method

被引：10

作者：

Franc, J

Belas, E

Toth, AL

Ivanov, YM

Sitter, H

Moravec, P

Hoschl, P

机构：

[1] Charles Univ, Inst Phys, CZ-12116 Prague 2, Czech Republic

[2] Hungarian Acad Sci, Tech Phys Res Inst, H-1047 Budapest, Hungary

[3] Johannes Kepler Univ, Inst Expt Phys, A-4040 Linz, Austria

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1998年 / 13卷 / 03期

关键词：

D O I：

10.1088/0268-1242/13/3/011

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Diffusion lengths of minority carriers in Cd1-xZnxTe (x approximate to 0.04) single crystals produced by the vertical gradient freezing method were studied. Au evaporated area was used as a Schottky barrier. Electron beam induced current images in the scanning electron microscope were used for an evaluation of minority carrier diffusion lengths at 300 K in different samples.

引用

页码：314 / 317

页数：4

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