Simulation of transient enhanced diffusion using computationally efficient models

被引：4

作者：

Yu, SS ^{[1
]}

Kennel, HW ^{[1
]}

Giles, MD ^{[1
]}

Packan, PA ^{[1
]}

机构：

[1] Intel Corp, Technol CAD, Hillsboro, OR 97124 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年

关键词：

D O I：

10.1109/IEDM.1997.650435

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a computationally efficient model for TED based on scalar 'damage' dose quantities which are created by implantation and removed during annealing. Spatial effects, extended defects, and effects of damage on dopant solubility are included. This approach is able to reproduce a wide range of conditions relevant to advanced submicron technologies accurately and efficiently.

引用

页码：509 / 512

页数：4