Aging and Raman scattering study of scandia and yttria doped zirconia

被引：129

作者：

Nomura, K

Mizutani, Y ^{[1
]}

Kawai, M

Nakamura, Y

Yamamoto, O

机构：

[1] Toho Gas Co Ltd, Tech Res Inst, Aichi 4768501, Japan

[2] Aichi Inst Technol, Aichi 4700392, Japan

来源：

SOLID STATE IONICS | 2000年 / 132卷 / 3-4期

关键词：

stabilized zirconia; electrical conductivity; Raman scattering; scandia stabilized zirconia;

D O I：

10.1016/S0167-2738(00)00648-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The changes of electrical conductivity during annealing at 1273 K in stabilized zirconia with 8 mol% Y2O3 (8YSZ), 8 mol% Sc2O3 (8ScSZ) and 11 mol% Sc2O3 (11ScSZ) have been examined. 8YSZ and 8ScSZ showed significant decrease in conductivity during the initial stage of annealing, whereas 11ScSZ showed no conductivity decrease. The Raman scattering technique was used to analyze the phase change in the annealed samples. The observed Raman spectrum suggested that the conductivity decrease in 8YSZ and 8ScSZ was caused by a local ordering toward the formation of tetragonal phase in the cubic matrix by annealing at 1273 K. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：235 / 239

页数：5

共 16 条

[1] EFFECT OF DOPANT CONCENTRATION ON ELECTRICAL-CONDUCTIVITY IN THE SC2O3-ZRO2 SYSTEM [J].