Carbon nitride films synthesized by the reactive ionized cluster beam technique

被引：8

作者：

Lu, HW ^{[1
]}

Zou, XR

Xie, JQ

Feng, JY

机构：

[1] Tsing Hua Univ, Dept Mat Sci & Engn, Beijing 100084, Peoples R China

[2] Tsing Hua Univ, State Key Lab Tribol, Beijing 100084, Peoples R China

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1998年 / 31卷 / 04期

关键词：

D O I：

10.1088/0022-3727/31/4/004

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Carbon nitride thin films were deposited by the reactive ionized cluster beam (RICE) technique. Fourier transform infrared (FTIR) transmission analysis shows that no marked IR peak exists for the film deposited without nitrogen, whereas a broad peak in the range 1000-1600 cm(-1) and a peak due to the C=N triple bonds are present for the films deposited with nitrogen. Both FTIR and Raman measurements obviously suggest that C-N single bonds exist when nitrogen is introduced. The intensity of this band rises with increasing nitrogen pressure. The above results are also supported by x-ray photoelectron spectroscopy (XPS) analysis.

引用

页码：363 / 367

页数：5

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