Microscopic theory of optical gain in small semiconductor quantum dots

被引：33

作者：

Hu, YZ

Giessen, H

Peyghambarian, N

Koch, SW

机构：

[1] UNIV MARBURG,FACHBEREICH PHYS,D-35112 MARBURG,GERMANY

[2] UNIV MARBURG,ZENTRUM MAT WISSENSCH,D-35112 MARBURG,GERMANY

来源：

PHYSICAL REVIEW B | 1996年 / 53卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.53.4814

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A microscopic theory is used to analyze optical gain in small semiconductor quantum dots. Based on a numerical matrix diagonalization method and subsequent solution of the optical Bloch equations, it is found that the quantum-dot gain is dominated by the stimulated transitions between biexciton and exciton states. The calculation shows that Coulomb interaction and valence-band mixing effects significantly influence the spectral and dynamic gain properties in strongly confined quantum dots.

引用

页码：4814 / 4822

页数：9

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