Properties of ⟨011]{111} slip in Al-rich γ-TiAl I.: Dissociation, locking and decomposition of ⟨011] dislocations at room temperature

被引:26
作者
Grégori, F
Veyssière, P
机构
[1] Inst Galilee, LPMTM, F-93430 Villetaneuse, France
[2] Off Natl Etud & Rech Aerosp, CNRS, Lab Etud Microstruct, F-92322 Chatillon, France
来源
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 2000年 / 80卷 / 12期
关键词
D O I
10.1080/01418610008223902
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In Al-rich gamma -TiAl deformed at room temperature, [011] dislocations dissociate in general into a 1/6[112] partial and a 1/6[154] partial located in the leading and trailing position respectively. Several implications of this dissociation mode on room-temperature plasticity are discussed. It is argued that, apart from load orientations where the critical resolved shear stress for [112]{111} slip is attained, 1/2[112] dislocations are sessile by-products of the decomposition of [011] dislocations and that, despite a significant relative abundance, they hardly contribute to strain.
引用
收藏
页码:2913 / 2932
页数:20
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