Optimized aluminum back surface field techniques for silicon solar cells

被引：32

作者：

Narasimha, S ^{[1
]}

Rohatgi, A ^{[1
]}

机构：

[1] Univ Georgia, Georgia Inst Technol, Ctr Excellence Photvolta Res & Educ, Dept Elect & Comp Engn, Atlanta, GA 30332 USA

来源：

CONFERENCE RECORD OF THE TWENTY SIXTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1997 | 1997年

关键词：

D O I：

10.1109/PVSC.1997.653925

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Screen-printed Al and rapid thermal alloying have been combined in order to achieve an Al back surface field (Al-BSF) which lowers the effective back surface recombination velocity to 200 cm/s on 2.3 Omega-cm Si. This Al-BSF process has been integrated into a high-efficiency, laboratory fabrication sequence as well as a high-throughput, industrial-type process in order to achieve solar cell efficiencies in excess of 19.0% and 17.0%, respectively, on 2.3 Omega-cm FZ Si. For both process sequences, the efficiency values are 1-2 absolute percentage points higher than cells made with un-optimized Al-BSFs. The critical process requirements for optimal Al-BSF formation are: 1) the use of a fast ramp rate to reach the alloying temperature, and 2) thick film Al deposition prior to alloying.

引用

页码：63 / 66

页数：4