Very-high-allowability of incidental optical power for polarization-insensitive InGaAs/InAlAs multiple quantum well modulators buried in semi-insulating InP

被引：17

作者：

Wakita, K ^{[1
]}

Kotaka, I ^{[1
]}

Matsumoto, S ^{[1
]}

Iga, R ^{[1
]}

Kondo, S ^{[1
]}

Noguchi, Y ^{[1
]}

机构：

[1] NTT, Optoelect Labs, Atsugi, Kanagawa 24301, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 3B期

关键词：

MQW; polarization-insensitive; modulator; buried heterostructure; high allowability; SIBH;

D O I：

10.1143/JJAP.37.1432

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Very-low insertion loss (< 6 dB) and polarization-insensitive (TE/TM polarization difference loss < 1.0 dB) strained InGaAs/InAlAs multiple quantum well (MQW) modulators with high-speed (3-dB bandwidth 18 GHz) and a high-saturation optical power level (16 dBm) have been fabricated and demonstrated. Allowability of incidental optical power for these modulators has been investigated using high-mesas and semi-insulating buried heterostructures (SIBHs). It is confirmed that the upper limit of allowability is determined by the product of absorbed photocurrent and applied voltage and the resulting SIBH is superior to that of high-mesa structures. The MQW layer thickness dependence of the allowability has also been investigated and it has been determined that the optical confinement factor has an important effect on the upper limit of this allowability.

引用

页码：1432 / 1435

页数：4

共 11 条

[1] FULL POLARIZATION INSENSITIVITY OF A 20 GB/S STRAINED-MQW ELECTROABSORPTION MODULATOR [J].