Transport and recombination channels in undoped microcrystalline silicon studied by ESR and EDMR

被引：20

作者：

Will, D ^{[1
]}

Lerner, C ^{[1
]}

Fuhs, W ^{[1
]}

Lips, K ^{[1
]}

机构：

[1] Univ Marburg, Fachbereich Phys, D-35032 Marburg, Germany

来源：

AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY - 1997 | 1997年 / 467卷

关键词：

D O I：

10.1557/PROC-467-361

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a detailed study of ESR and spin-dependent transport (EDMR) on mu c-Si. We identify to different types of defects at g=2.0055(+/-3) and g=2.0044(+/-5) and study their influence on transport and recombination by stepwise annealing the samples. We find that transport is not controlled by defects if N-D<10(18)cm(-3). For N-D>10(18)cm(-3) a dramatic decrease of the conductivity is found and we identify a hopping contribution in transport. To explain our ESR and EDMR results we propose a simple model where most defects are distributed at the surface of the columns and transport is along percolation paths. We also observe minor metastable changes of the defect density which are assigned to adsorption of atmospheric oxygen.

引用

页码：361 / 366

页数：6