A K-band tunable microstrip bandpass filter using a thin-film conductor/ferroelectric/dielectric multilayer configuration

被引：60

作者：

Subramanyam, G ^{[1
]}

Van Keuls, F

Miranda, FA

机构：

[1] Univ No Iowa, Cedar Falls, IA 50614 USA

[2] NASA, Lewis Res Ctr, Cleveland, OH 44135 USA

来源：

IEEE MICROWAVE AND GUIDED WAVE LETTERS | 1998年 / 8卷 / 02期

基金：

美国国家航空航天局;

关键词：

ferroelectric thin films; K-band frequencies; multilayer structures; tunable bandpass filters;

D O I：

10.1109/75.658647

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on a gold/strontium titanate (Au/SrTiO3) thin-film K-band tunable bandpass filter on a lanthanum aluminate substrate. The two-pole filter has a center frequency of 19 GHz and a 4% bandwidth, Tunability is achieved through the nonlinear temperature dependence and the de electric field dependence of the relative dielectric constant of SrTiO3. A center frequency shift of 0.85 GHz was obtained at 400-V dc bias and 77 K without degrading the insertion loss of the filter.

引用

页码：78 / 80

页数：3

共 10 条

[1]

[Anonymous], 1992, Foundations for Microstrip Circuit Design

[2]

FINDIKOGLU AT, 1996, APPL PHYS LETT, V68

[3]

FINDIKOGLU AT, 1994, J APPL PHYS, V76

[4] CHARACTERIZATION OF A TUNABLE THIN-FILM MICROWAVE YBA2CU3O7-X/SRTIO3 COPLANAR CAPACITOR [J].