Quantum chemical mechanism in parasitic reaction of AlGaN alloys formation

被引:29
作者
Makino, O
Nakamura, K
Tachibana, A [1 ]
Tokunaga, H
Akutsu, N
Matsumoto, K
机构
[1] Kyoto Univ, Dept Engn Phys & Mech, Kyoto 6068501, Japan
[2] Kyoto Univ, Dept Mol Engn, Kyoto 6068501, Japan
[3] NIPPON SANSO Corp, Tsukuba Lab, Tsukuba, Ibaraki 3002611, Japan
关键词
MOVPE; ab initio; AlGaN; blue laser; parasitic reaction;
D O I
10.1016/S0169-4332(00)00110-0
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The mechanism of parasitic reactions among trimethylaluminum (TMA), trimethylgallium (TMG), and NH3 in atmospheric pressure (AP) MOVPE for growth of AlGaN is theoretically studied using the quantum chemical method. The calculations show that metal-nitrogen chain growth reaction easily proceeds through the successive reactions of 'complex formation with NH3' and 'CH4 elimination by the bimolecular mechanism'. Additionally, a parasitic reaction in APMOVPE using other raw material is also investigated. The calculated result shows that small change of raw material raises activation energy of parasitic reaction, and, thus, the parasitic reaction is suppressed. This result suggests a way to improve APMOVPE by a suitable choice of substituent. (C) 2000 Elsevier Science B.V. All rights reserved. PACS: 81.10.Aj, 31.15.Ar; 82.30.Eh.
引用
收藏
页码:374 / 379
页数:6
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