Dark currents in double-heterostructure and quantum-well solar cells
被引:4
作者:
Corkish, R
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h-index: 0
机构:
Univ New S Wales, Photovolta Special Res Ctr, Sydney, NSW 2052, AustraliaUniv New S Wales, Photovolta Special Res Ctr, Sydney, NSW 2052, Australia
Corkish, R
[1
]
Honsberg, CB
论文数: 0引用数: 0
h-index: 0
机构:
Univ New S Wales, Photovolta Special Res Ctr, Sydney, NSW 2052, AustraliaUniv New S Wales, Photovolta Special Res Ctr, Sydney, NSW 2052, Australia
Honsberg, CB
[1
]
机构:
[1] Univ New S Wales, Photovolta Special Res Ctr, Sydney, NSW 2052, Australia
来源:
CONFERENCE RECORD OF THE TWENTY SIXTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1997
|
1997年
关键词:
D O I:
10.1109/PVSC.1997.654238
中图分类号:
TE [石油、天然气工业];
TK [能源与动力工程];
学科分类号:
0807 ;
0820 ;
摘要:
Numerical modelling shows that the separation of the quasi-fermi potentials in the lower bandgap region of a double-heterostructure may be less than the terminal voltage, resulting in smaller dark currents than would be expected if flat quasi-fermi levels were assumed. Quasi-Fermi level variations occur as a response to carrier transport limitation by drift and diffusion within the space-charge region or by thermionic emission. This is a possible explanation for the low dark currents which have been measured in quantum-well p-i-n solar cells. This effect, together with evidence that photogenerated carriers can escape from quantum wells with high efficiency, suggests that the inclusion of low-bandgap regions in the depletion regions of solar cells may lead to high efficiency devices.