Dark currents in double-heterostructure and quantum-well solar cells

被引:4
作者
Corkish, R [1 ]
Honsberg, CB [1 ]
机构
[1] Univ New S Wales, Photovolta Special Res Ctr, Sydney, NSW 2052, Australia
来源
CONFERENCE RECORD OF THE TWENTY SIXTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1997 | 1997年
关键词
D O I
10.1109/PVSC.1997.654238
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Numerical modelling shows that the separation of the quasi-fermi potentials in the lower bandgap region of a double-heterostructure may be less than the terminal voltage, resulting in smaller dark currents than would be expected if flat quasi-fermi levels were assumed. Quasi-Fermi level variations occur as a response to carrier transport limitation by drift and diffusion within the space-charge region or by thermionic emission. This is a possible explanation for the low dark currents which have been measured in quantum-well p-i-n solar cells. This effect, together with evidence that photogenerated carriers can escape from quantum wells with high efficiency, suggests that the inclusion of low-bandgap regions in the depletion regions of solar cells may lead to high efficiency devices.
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页码:923 / 926
页数:4
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