Electron spin relaxation in a semiconductor quantum well

被引：25

作者：

Puller, VI ^{[1
]}

Mourokh, LG

Horing, NJM

Smirnov, AY

机构：

[1] Stevens Inst Technol, Dept Phys & Engn Phys, Hoboken, NJ 07030 USA

[2] D Wave Syst Inc, Vancouver, BC V6J 4Y3, Canada

来源：

PHYSICAL REVIEW B | 2003年 / 67卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.67.155309

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A fully microscopic theory of electron spin relaxation by the D'yakonov-Perel' type spin-orbit coupling is developed for a semiconductor quantum well in an ambient magnetic field applied perpendicular to the plane of the well. We derive Bloch equations for an electron spin in the well and determine explicit microscopic expressions for the spin relaxation times. The dependencies of the electron spin relaxation rates on magnetic field strength, temperature, and the lowest subband energy of the quantum well are analyzed.

引用

页数：9

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