Photoconductivity of a-Si:H as a function of doping, temperature and photocarrier generation rates between 10(13) and 10(28)cm(-3)s(-1)

The steady state photoconductivity sigma(p) of n-type, p-type and intrinsic a-Si:H has been studied up to photocarrier generation rates of G=5x10(27)cm(-3)s(-1). In the 20ppm B2H6/SiH4 p-type sample photoconduction switches from holes at low G to electrons at high G. The electron photoconduction at high G is increased by n-type and decreased by p-type doping. This is explained by the charge state of the dominant electron recombination centers. The sigma(p)(G) curves of doped and intrinsic a-Si:H merge at the highest G used.