Stacked inductors and 1-to-2 transformers in CMOS technology

被引：9

作者：

Zolfaghari, A ^{[1
]}

Chan, A ^{[1
]}

Razavi, B ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90024 USA

来源：

PROCEEDINGS OF THE IEEE 2000 CUSTOM INTEGRATED CIRCUITS CONFERENCE | 2000年

关键词：

D O I：

10.1109/CICC.2000.852681

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

A modification of stacked spiral inductors increases the self-resonance frequency by 100% with no additional processing steps, yielding values of 5 nH to 266 nH and self-resonance frequencies of 11.2 GHz to 0.5 GHz, Closed-form expressions predicting the self-resonance frequency with less than 5% error have also been developed. A 1-to-2 transformer consisting of 3 stacked spirals achieves a voltage gain of 1.8 at 2.5 GHz. The structures have been fabricated in standard CMOS technologies with four and five metal layers.

引用

页码：345 / 348

页数：4