Improved process control, lowered costs and reduced risks through the use of non-destructive mobility and sheet carrier density measurements on GaAs and GaN wafers

被引：11

作者：

Nguyen, D ^{[1
]}

Hogan, K ^{[1
]}

Blew, A ^{[1
]}

Cordes, M ^{[1
]}

机构：

[1] Lehighton Elect Inc, Lehighton, PA 18235 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2004年 / 272卷 / 1-4期

关键词：

2DEG; ASTM International F1.15 compound semiconductor subcommittee; cap layer; effective yield improvement; GaAsGaN wafer process control; Hall effect; Hall mobility; higher yields; more stable process and lower cost; non destructive test; R and R tests; wafer map; GaAs; GaN;

D O I：

10.1016/j.jcrysgro.2004.08.046

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Improved process control, lowered costs and reduced risks can be realized through the use of non-destructive mobility and sheet charge density measurements during the fabrication of GaAs and GaN wafers. The results from this microwave-based technique are shown to agree with destructive van der Pauw Hall testing results to within +/-5%. In addition, it has the ability to map wafer uniformity and provide separated 2DEG data for thick cap or multi-layered structures. As a result, this technique provides an efficient and cost-effective alternative to current process control metrology methods, while providing the user with important process control data. (C) 2004 Published by Elsevier B.V.

引用

页码：59 / 64

页数：6

共 6 条

[1] DETERMINATION OF ELECTRICAL TRANSPORT-PROPERTIES USING A NOVEL MAGNETIC FIELD-DEPENDENT HALL TECHNIQUE [J].