High-density matrix-addressable AlInGaN-Based 368-nm microarray light-emitting diodes

被引：57

作者：

Jeon, CW ^{[1
]}

Choi, HW ^{[1
]}

Gu, ER ^{[1
]}

Dawson, MD ^{[1
]}

机构：

[1] Univ Strathclyde, Inst Photon, Glasgow G4 0NW, Lanark, Scotland

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2004年 / 16卷 / 11期

关键词：

GaN; microarray light-emitting diodes (microLEDs); photolithography; ultraviolet light-emitting diode (UV-LED);

D O I：

10.1109/LPT.2004.835626

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the fabrication of ultraviolet (UV) microarray light-emitting diodes, toward applications including mask-free photolithographic exposure. Devices with 64 x 64 elements have been fabricated in matrix-addressed format, generating directed output powers of up to 1 muW per 20-mum-diameter element at less than 1.0-mA drive current. The resistance of each elemental device was found to depend strongly on the n-GaN stripe length. The center wavelength of the emission was measured to be 368 nm, which is very close to that of an i-line (365 nm) UV light source. To our knowledge, this is the first report detailing the fabrication and performance of such devices operating in the UV.

引用

页码：2421 / 2423

页数：3

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