Fast pixel-based optical proximity correction based on nonparametric kernel regression

被引:21
作者
Ma, Xu [1 ]
Wu, Bingliang [1 ]
Song, Zhiyang [1 ]
Jiang, Shangliang [2 ]
Li, Yanqiu [1 ]
机构
[1] Beijing Inst Technol, Sch Optoelect, Key Lab Photoelect Imaging Technol & Syst, Minist Educ China, Beijing 100081, Peoples R China
[2] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94706 USA
来源
JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS | 2014年 / 13卷 / 04期
基金
中国国家自然科学基金;
关键词
lithography; resolution enhancement technique; optical proximity correction; nonparametric kernel regression; machine learning; MASK OPTIMIZATION; INVERSE LITHOGRAPHY; DESIGN; BINARY;
D O I
10.1117/1.JMM.13.4.043007
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Optical proximity correction (OPC) is a resolution enhancement technique extensively used in the semiconductor industry to improve the resolution and pattern fidelity of optical lithography. In pixel-based OPC (PBOPC), the layout is divided into small pixels, which are then iteratively modified until the simulated print image on the wafer matches the desired pattern. However, the increasing complexity and size of modern integrated circuits make PBOPC techniques quite computationally intensive. This paper focuses on developing a practical and efficient PBOPC algorithm based on a nonparametric kernel regression, a well-known technique in machine learning. Specifically, we estimate the OPC patterns based on the geometric characteristics of the original layout corresponding to the same region and a series of training examples. Experimental results on metal layers show that our proposed approach significantly improves the speed of a current professional PBOPC software by a factor of 2 to 3, and may further reduce the mask complexity. (C) The Authors.
引用
收藏
页数:11
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