Vacancy-assisted oxygen precipitation phenomena in Si

被引：53

作者：

Falster, R

Pagani, M

Gambaro, D

Cornara, M

Olmo, M

Ferrero, G

Pichler, P

Jacob, M

机构：

[1] MEMC Elect Mat SPA, I-28100 Novara, Italy

[2] Fraunhofer Inst Integrierte Schaltungen, D-91058 Erlangen, Germany

来源：

SOLID STATE PHENOMENA | 1997年 / 57-8卷

关键词：

vacancies; oxygen; nucleation; rapid thermal annealing;

D O I：

10.4028/www.scientific.net/SSP.57-58.129

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The influence of vacancy concentration on oxygen nucleation/precipitation kinetics in CZ silicon has been studied. Vacancies have been injected into the wafer bulk by thermal nitridation of the surface. This treatment causes oxygen precipitation enhancement. Vacancy-rich material is also characterized by a significant formation of oxygen precipitates at low temperatures, even in material in which the as-grown oxygen precipitates have been suppressed. Finally, experimental evidence is presented that vacancies are consumed during the nucleation process.

引用

页码：129 / 136

页数：8

共 16 条

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BRACHT H, 1994, SEMICONDUCTOR SILICO, P593

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