Dependence of the superconducting transition temperature on the doping level in single-crystalline diamond films

被引：190

作者：

Bustarret, E

Kacmarcik, J

Marcenat, C

Gheeraert, E

Cytermann, C

Marcus, J

Klein, T

机构：

[1] CNRS, Etud Proprietes Elect Solides Lab, F-38042 Grenoble 9, France

[2] Commiss Energie Atom Grenoble, Dept Rech Fondamentale Mat Condensee, SPSMS, F-38054 Grenoble 9, France

[3] Slovak Acad Sci, Inst Expt Phys, Ctr Low Temp Phys, Kosice 04353, Slovakia

[4] FS UPJS, Kosice 04353, Slovakia

[5] Technion Israel Inst Technol, Inst Solid State, IL-32000 Haifa, Israel

[6] Inst Univ France, F-38041 Grenoble 9, France

[7] Univ Grenoble 1, F-38041 Grenoble 9, France

来源：

PHYSICAL REVIEW LETTERS | 2004年 / 93卷 / 23期

关键词：

D O I：

10.1103/PhysRevLett.93.237005

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Homoepitaxial diamond layers doped with boron in the 10(20)-10(21) cm(-3) range are shown to be type II superconductors with sharp transitions (similar to0.2 K) at temperatures increasing from 0 to 2.1 K with boron contents. The critical concentration for the onset of superconductivity in those 001-oriented single-crystalline films is about 5-7 10(20) cm(-3). The H-T phase diagram has been obtained from transport and ac-susceptibility measurements down to 300 mK.

引用

页数：4

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