A degradation-free Cu/HSQ Damascene technology using metal mask patterning and post-CMP cleaning by electrolytic ionized water

被引：10

作者：

Aoki, H ^{[1
]}

Yamasaki, S ^{[1
]}

Usami, T ^{[1
]}

Tsuchiya, Y ^{[1
]}

Ito, N ^{[1
]}

Onodera, T ^{[1
]}

Hayashi, Y ^{[1
]}

Ueno, K ^{[1
]}

Gomi, H ^{[1
]}

Aoto, N ^{[1
]}

机构：

[1] NEC Corp Ltd, ULSI Device Dev Labs, Kanagawa 229, Japan

来源：

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年

关键词：

D O I：

10.1109/IEDM.1997.650497

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A Cu/HSQ damascene structure can be achieved by a new HSQ patterning technology using a TIN mask and post-CMP cleaning with electrolytic ionized ultra-pure cathode water. A Cu/HSQ structure with capacitance 17% lower than that of HSQ patterned by a conventional photo-resist-mask process was successfully fabricated with a sufficiently small number of post-Cu-CMP particles, only 30% of that with conventional post-Cu-CMP cleaning.

引用

页码：777 / 780

页数：4