Backside localization of open and shorted IC interconnections

被引：81

作者：

Cole, EI ^{[1
]}

Tangyunyong, P ^{[1
]}

Barton, DL ^{[1
]}

机构：

[1] Sandia Natl Labs, Elect Qual Reliabil Ctr, Albuquerque, NM 87185 USA

来源：

1998 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 36TH ANNUAL | 1998年

关键词：

D O I：

10.1109/RELPHY.1998.670462

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new failure analysis technique has been developed for backside and frontside localization of open and shorted interconnections on ICs. This scanning optical microscopy technique takes advantage of the interactions between IC defects and localized heating using a focused infrared laser (lambda = 1340 nm). Images are produced by monitoring the voltage changes across a constant current supply used to power the IC as the laser beam is scanned across the sample. The method utilizes the Seebeck Effect to localize open interconnections and Thermally-Induced Voltage Alteration (TIVA) to detects shorts. The interaction physics describing the signal generation process and several examples demonstrating the localization of opens and shorts are described. Operational guidelines and limitations are also discussed.

引用

页码：129 / 136

页数：8