High-performance bottom-contact devices based on an air-stable n-type organic semiconductor N,N-bis (4-trifluoromethoxybenzyl)-1,4,5,8-naphthalene-tetracarboxylic di-imide

被引：42

作者：

Kao, Chia-Chun

Lin, Pang

Lee, Cheng-Chung ^{[1
]}

Wang, Yi-Kai

Ho, Jia-Chong

Shen, Yu-Yuan

机构：

[1] Ind Technol Res Inst, Proc Technol Div, Display Technol Ctr, Mito, Ibaraki 310, Japan

[2] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 21期

关键词：

D O I：

10.1063/1.2741414

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

N,N-bis(4-trifluoromethoxybenzyl)-1,4,5,8-naphthalene-tetracarboxylic di-imide was applied to organic semiconductors for bottom-contact thin-film transistors. The carrier mobility was 1.6x10(-2) cm(2) V-1 s(-1), the threshold voltage (V-T) was +5.5 V, and the on/off current ratio was 8.6x10(5). Devices without any further surface treatments were tested in an ambient environment. The threshold voltage shift (Delta V-T) was verified by gate bias stress measurements. A prototype compound, N,N-bis(4-trifluoromethylbenzyl)naphthalene-1,4,5,8-tetracarboxylic di-imide, shows direct correlation to the bottom-contact device with the varied molecular structure. (c) 2007 American Institute of Physics.

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页数：3

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