Dielectric response of semiconducting carbon nanotubes

被引：59

作者：

Léonard, F

Tersoff, J

机构：

[1] Sandia Natl Labs, Livermore, CA 94551 USA

[2] IBM Corp, Div Res, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 25期

关键词：

D O I：

10.1063/1.1530373

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The dielectric response of semiconducting carbon nanotubes is studied within a tight-binding theory. We focus on "zigzag" tubes, finding that the induced charge exhibits large oscillations within the unit cell. The spatial extent of the response function is roughly equal to the nanotube radius, for any radius. We point out that the dielectric constant of undoped tubes (or any low-dimensional semiconductor) is 1. Our results are confirmed by direct numerical calculations. (C) 2002 American Institute of Physics.

引用

页码：4835 / 4837

页数：3

共 5 条

[1] STATIC POLARIZABILITIES OF SINGLE-WALL CARBON NANOTUBES [J].

BENEDICT, LX ;

LOUIE, SG ;

COHEN, ML .

PHYSICAL REVIEW B, 1995, 52 (11) :8541-8549

[2] Nanotube devices: A microscopic model [J].

Bulashevich, KA ;

Rotkin, SV .

JETP LETTERS, 2002, 75 (04) :205-209

[3] Negative differential resistance in nanotube devices [J].

Léonard, F ;

Tersoff, J .

PHYSICAL REVIEW LETTERS, 2000, 85 (22) :4767-4770

[4] Impurity screening in carbon nanotubes [J].

Lin, MF ;

Chuu, DS .

PHYSICAL REVIEW B, 1997, 56 (08) :4996-5002

[5] ELECTRONIC-STRUCTURE OF CHIRAL GRAPHENE TUBULES [J].

SAITO, R ;

FUJITA, M ;

DRESSELHAUS, G ;

DRESSELHAUS, MS .

APPLIED PHYSICS LETTERS, 1992, 60 (18) :2204-2206

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