DUV resist UV II HS applied to high resolution electron beam lithography and to masked ion beam proximity and reduction printing

被引：8

作者：

Bruenger, WH

Buschbeck, H

Cekan, E

Eder, S

Fedynyshyn, TH

Hertlein, WG

Hudek, P

Kostic, I

Loeschner, H

Rangelow, IW

Torkler, M

机构：

[1] Fraunhofer Inst Silicon Technol, D-14199 Berlin, Germany

[2] IMS Ion Microfabricat Syst GMBH, A-1020 Vienna, Austria

[3] Shipley Co Inc, Marlborow, MA 01753 USA

[4] Shipley Europe Ltd, CH-8640 Kemprapen, Switzerland

[5] Univ Kassel, Phys Tech Inst, D-34132 Kassel, Germany

来源：

MICROELECTRONIC ENGINEERING | 1998年 / 42卷

关键词：

D O I：

10.1016/S0167-9317(98)00054-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The positive DUV-resist UV II HS from Shipley has been evaluated for 30keV e-beam and 75keV H+ ion exposure. Ln the case of electrons the large area sensitivity of this chemically amplified resist was 5 mu C/cm(2). 100nm wide lines could be delineated into 1 mu m thick resist. Pattern transfer into SiO2 was possible with an etch selectivity SiO2/resist of > 5. In the case of H+ ion exposure into UV II MS-0.6 resist the sensitivity was 0.15 mu C/cm(2) which corresponds to 1x10(12) H+ ions/cm(2). With 8.4 times demagnification of the mask, the ion projector in Berlin could expose 80nm wide features into 370nm thick resist with an exposure latitude of +/-10%. The 1:1 ion beam proximity printer at IMS, Vienna delineated the smallest mask features (1 mu m) over a mask to wafer gap of Imm with < 5nm pattern widening for +/-10% overexposure.

引用

页码：237 / 240

页数：4