Large-signal performance of high-BVCEO graded epi-base SiGe HBTs at wireless frequencies

被引：21

作者：

Greenberg, DR ^{[1
]}

Rivier, M ^{[1
]}

Girard, P ^{[1
]}

Bergeault, E ^{[1
]}

Moniz, J ^{[1
]}

Ahlgren, D ^{[1
]}

Freeman, G ^{[1
]}

Subbanna, S ^{[1
]}

Jeng, SJ ^{[1
]}

Stein, K ^{[1
]}

Nguyen-Ngoc, D ^{[1
]}

Schonenberg, K ^{[1
]}

Malinowski, J ^{[1
]}

Colavito, D ^{[1
]}

Harame, DL ^{[1
]}

Meyerson, B ^{[1
]}

机构：

[1] IBM Corp, Microelect Div, Hopewell Junction, NY 12533 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年

关键词：

D O I：

10.1109/IEDM.1997.650502

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

To address the needs of 3 V wireless components such as power amplifiers, we have added a new, high-breakdown (6 V) HBT to IBM's 200 mm SiGe technology and explore the large-signal performance for the first time. At 0.9 GHz and 1.8 GHz, we observe excellent power densities of up to 1.36 mW/mu m(2), outstanding PAE reaching 70% and no performance degradation in integrating the HBT with CMOS.

引用

页码：799 / 802

页数：4