Quantum confinement energies in zinc-blende III-V and group IV semiconductors

被引：55

作者：

Allan, G ^{[1
]}

Niquet, YM ^{[1
]}

Delerue, C ^{[1
]}

机构：

[1] Inst Elect & Microelectron Nord, Dept Inst Super Electron Nord, F-59652 Villeneuve Dascq, France

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 05期

关键词：

D O I：

10.1063/1.127070

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Blueshift of the hand gap due to quantum confinement is calculated in a tight-binding model for a series of nine III-V zinc-blende AB (A=Al, Ga, or In, B=As, P, or Sb) and two diamond group-IV (Si and Ge) semiconductor clusters. Analytic expressions for the highest occupied molecular orbital and lowest unoccupied molecular orbital energy levels are given as a function of the cluster size. Comparison is made to results obtained by the pseudopotential method and to experimental results. (C) 2000 American Institute of Physics. [S0003-6951(00)00431-9].

引用

页码：639 / 641

页数：3

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