Cu-In-Ga-Se nanoparticle colloids as spray deposition precursors for Cu(In,Ga)Se2 solar cell materials

被引:76
作者
Schulz, DL [1 ]
Curtis, CJ [1 ]
Flitton, RA [1 ]
Wiesner, H [1 ]
Keane, J [1 ]
Matson, RJ [1 ]
Jones, KM [1 ]
Parilla, PA [1 ]
Noufi, R [1 ]
Ginley, DS [1 ]
机构
[1] Natl Renewable Energy Lab, Ctr Photovoltaic & Elect Mat, Golden, CO 80401 USA
关键词
CuInSe2; CIS; colloid; nanoparticle; solar cell; spray deposition;
D O I
10.1007/s11664-998-0173-5
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The use of nanoparticle colloids for spray deposition of Cu(In,Ga)Se-2 (CIGS) precursor films and subsequent fabrication of CIGS solar cells has been investigated. According to this approach, amorphous Cu-In-Ga-Se nanoparticle colloids were first prepared by reacting a mixture of CuI, InI3, and GaI3 in pyridine with Na2Se in methanol at reduced temperature. Purified colloid was sprayed onto heated molybdenum-coated sodalime glass substrates to form Cu-In-Ga-Se precursor films. After thermal processing of the precursor films under a selenium ambient, CIGS solar cells were fabricated. Cu-In-Ga-Se colloids and films were characterized by inductively coupled plasma atomic emission spectroscopy, thermogravimetric analysis; transmission electron microscopy, x-ray diffraction, scanning electron microscopy, and Auger electron spectroscopy. Standard current-voltage characterization was performed on the CIGS solar cell devices with the best film exhibiting a solar conversion efficiency of 4.6%.
引用
收藏
页码:433 / 437
页数:5
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