Bis(dithienothiophene) organic field-effect transistors with a high ON/OFF ratio

被引：100

作者：

Sirringhaus, H

Friend, RH

Li, XC

Moratti, SC

Holmes, AB

Feeder, N

机构：

[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

[2] Univ Cambridge, Melville Lab Polymer Synth, Cambridge CB2 3RA, England

[3] Univ Cambridge, Chem Lab, Cambridge CB2 1EW, England

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 26期

关键词：

D O I：

10.1063/1.120529

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A conjugated, fused-thiophene oligomer, bis(dithienothiophene) (BDT), has been synthesized and deposited by vacuum sublimation as the active layer in organic thin film transistors (TFTs). The TFTs show exceptionally high ON/OFF ratios up to 10(8) between accumulation and depletion with sharp turn-on characteristics comparable to that of amorphous silicon TFTs (subthreshold slope S=0.6 V/decade). Field-effect mobilities are 0.02-0.05 cm(2)/V s. The good performance is explained by the relatively high pi-pi* gap of the short-chain BDT molecule and the favorable coplanar pi-pi stacking in BDT, differing from the herringbone stacking in the oligothiophenes. (C) 1997 American Institute of Physics.

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页码：3871 / 3873

页数：3

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