Preparation by a sol-gel process and dielectric properties of lead zirconate titanate glass-ceramic thin films

Ferroelectric glass-ceramic thin films of PbZr0.5Ti0.5O3 (PZT)-PbO-B2O3, PZT-PbO-SiO2 and PZT-PbOSiO2-B2O3 were produced by a sol-gel process. A pin-hole-free thin film of 300-500 nm thickness on a Pt/Ti/ SiO2/Si substrate was obtained having a structure in which small PZT crystals developed in a glass matrix. A high PZT content, of more than 80%. was achieved at levels unattainable by a conventional glass-ceramics preparation method. The perovskite-type PZT crystallized at around 500 degrees C in the pure PZT, PZT-PbO-B2O3; and PZT-PbO-SiO2-B2O3 systems and at around 700 degrees C in the PZT-PbO-SiO2 system. The dielectric properties of the 0.835PZT-0.165(3PbO . SiO2 . B2O3) film fired at 700 degrees C with gold electrodes were epsilon = 1000, and tan delta = 0.035.