Current-induced giant electroresistance in La0.7Sr0.3MnO3 thin films -: art. no. 064412

被引：62

作者：

Debnath, AK ^{[1
]}

Lin, JG ^{[1
]}

机构：

[1] Natl Taiwan Univ, Ctr Condensed Matter Sci, Taipei 10617, Taiwan

来源：

PHYSICAL REVIEW B | 2003年 / 67卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.67.064412

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electroresistance (ER) and magnetoresistance (MR) of La0.7Sr0.3MnO3 (LSMO) thin films with different thicknesses (t) are investigated. We found a metallic-to-insulating (M-I) transition in films with t=80 nm. For the 80-nm film, a giant room-temperature ER ratio of 11.3% is achieved with an electric current of 0.9 mA. This value of the ER ratio is four times larger resistive response than that of the MR ratio under 1 T. The enhancement of the ER value in these disordered metallic LSMO thin films is correlated with the coexistence of metallic and insulating phases and attributed to the mechanism of phonon-assisted delocalization.

引用

页数：5

共 36 条

[1] Disorder effects in epitaxial thin films of (La,Ca)MnO3 [J].

Aarts, J ;

Freisem, S ;

Hendrikx, R ;

Zandbergen, HW .

APPLIED PHYSICS LETTERS, 1998, 72 (23) :2975-2977

[2] ABSENCE OF DIFFUSION IN CERTAIN RANDOM LATTICES [J].

ANDERSON, PW .

PHYSICAL REVIEW, 1958, 109 (05) :1492-1505

[3] Current switching of resistive states in magnetoresistive manganites [J].

Asamitsu, A ;

Tomioka, Y ;

Kuwahara, H ;

Tokura, Y .

NATURE, 1997, 388 (6637) :50-52

[4] Switching in coplanar amorphous hydrogenated silicon devices [J].

Avila, A ;

Asomoza, R .

SOLID-STATE ELECTRONICS, 2000, 44 (01) :17-27

[5] Low-temperature transition to a metallic state in (La0.5Pr0.5)0.7Ca0.3MnO3 films [J].

Babushkina, NA ;

Belova, LM ;

Khomskii, DI ;

Kugel, KI ;

Gorbenko, OY ;

Kaul, AR .

PHYSICAL REVIEW B, 1999, 59 (10) :6994-7000

[6] High-field magnetoresistance at interfaces in manganese perovskites [J].

Balcells, L ;

Fontcuberta, J ;

Martínez, B ;

Obradors, X .

PHYSICAL REVIEW B, 1998, 58 (22) :14697-14700

[7] Two-phase behavior in strained thin films of hole-doped manganites [J].

Biswas, A ;

Rajeswari, M ;

Srivastava, RC ;

Li, YH ;

Venkatesan, T ;

Greene, RL ;

Millis, AJ .

PHYSICAL REVIEW B, 2000, 61 (14) :9665-9668

[8] Thermal and magnetic instability near the percolation threshold of Nd0.5(Ca,Sr)0.5MnO3 -: art. no. 024422 [J].

Chang, CW ;

Debnath, AK ;

Lin, JG .

PHYSICAL REVIEW B, 2002, 65 (02) :244221-244226

[9] Current-assisted annealing effect in Nd0.5(Ca,Sr)0.5MnO3 [J].

Chang, CW ;

Debnath, AK ;

Lin, JG .

JOURNAL OF APPLIED PHYSICS, 2002, 91 (04) :2216-2219

[10] ELECTRON LOCALIZATION IN MIXED-VALENCE MANGANITES [J].

COEY, JMD ;

VIRET, M ;

RANNO, L ;

OUNADJELA, K .

PHYSICAL REVIEW LETTERS, 1995, 75 (21) :3910-3913

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