Subband structure engineering for performance enhancement of Si MOSFETs

被引：92

作者：

Takagi, S ^{[1
]}

Koga, J ^{[1
]}

Toriumi, A ^{[1
]}

机构：

[1] Toshiba Co Ltd, Adv Semicond Devices Res Labs, Isogo Ku, Yokohama, Kanagawa 235, Japan

来源：

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年

关键词：

D O I：

10.1109/IEDM.1997.650345

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a new strategy to enhance the current drive of Si MOSFETs, utilizing a subband structure engineering, It is found that SOI MOSFETs with SOI thickness thinner than the inversion layer of bulk MOSFETs can provide higher current drive than bulk MOSFETs, because of the significant modulation of the subband structure. This performance enhancement is attributed to the increase in both the inversion-layer mobility and the inversion-layer capacitance.

引用

页码：219 / 222

页数：4